www.dynexsemi.com ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 1/6 applications capacitor discharge pulse power applications features the ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on characteristics. voltage ratings key parameters v drm 3300v i t(av) 660a i tsm 6500a dvdt 3000v/ s di/dt 2000a/ s t on 700ns 3300 ACR300SG33 repetitive peak reverse voltage v rrm v 20 lower voltage grades available. type number repetitive peak off-state voltage v drm v fig. 1 see package details for further information current ratings symbol parameter conditions double side cooled i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current single side cooled (anode side) i t(av) mean on-state current i t(rms) rms value i t continuous (direct) on-state current units max. half wave resistive load, t case = 80 o c 660 a t case = 80 o c 1040 a t case = 80 o c 890 a half wave resistive load, t case = 80 o c 470 a t case = 80 o c 745 a t case = 80 o c 570 a ACR300SG33 fast turn-on asymmetric thyristor replaces april 2000 version, ds5081-2.2 ds5081-2.4 august 2000 outline type code: g.
www.dynexsemi.com ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 2/6 surge ratings conditions max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing 180 ka 2 s 6ka thermal and mechanical data dc conditions min. max. units o c/w - 0.070 anode dc clamping force 7.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.018 double side - 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter clamping force 6.0 8.0 kn -55 125 o c - on-state (conducting) - 150 o c - 0.036 o c/w o c/w cathode dc - 0.092 o c/w double side cooled - 0.042 o c/w 10ms half sine; t case = 125 o c v r = 0 fig.1 turn-on time measurement v d i g 0.9 x 1600v 0.37 x 1600v t t d t r i g pk 10% i g pk t
www.dynexsemi.com ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 3/6 gate trigger characteristics and ratings v dwm = 12v, r l = 6 ? , t case = 25 o c typ. max. units conditions parameter symbol v gt gate trigger voltage v dwm = 12v, r l = 6 ? , t case = 25 o c i gt gate trigger current -5v - 500 ma v fgm peak forward gate voltage - -40v v rgm peak reverse gate voltage i fgm peak forward gate current - p gm peak gate power - -10v -20a -40w -10w - forward average time 10ms max p g(av) average gate power dynamic characteristics v tm parameter symbol conditions maximum on-state voltage at 1000a peak, t case = 25 o c i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c from v drm to 125a gate source 30v, 10 ? gate rise time = 100ns, t j = 125?c dv/dt linear rate of rise of off-state voltage to v d = 2000v, gate open circuit, t j = 125 o c min. max. units - 2.0 v -60ma 3000 - v/ s - 2000 a/ s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c latching current 1.19 -v - 0.81 m ? v d = 5v, t j = 25?c i l - 600 ma i h holding current i tm = 500a, i t = 5a, t j = 25?c t d delay time v d = 3000v gate source = 30v, 10 ? gate rise time = 100ns - 300 ma - 350 ns see fig.1. t j = 25 - 70?c. ns 50 - rise time t r --ns t j = 25?c t j = 70?c current carrying capability after chip short circuit in the event of a chip short-circuit due to excess anode-cathode voltage, the device will handle a high continuous rms fault current without significant damage. rating details are as follows: continuous current capability: 300a rms, ac or dc in either direction. conditions: 1. device single or double side cooled. 2. case temperature to be held at 200?c or less. 3. a suitable high temperature clamp to be used. 4. chip fault site resistance assumed to be 3m ? 10%.
www.dynexsemi.com ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 4/6 curves 0 500 1000 1500 2000 2500 3000 3500 0 0.5 1 1.5 2 2.5 3 3.5 4 instantaneous voltage, v t - (v) instantaneous current, i t - (a) t j = 125 ? c fig.2 on-state characteristics fig.3 transient thermal impedance - junction to case 0 20 40 60 80 thermal impedance - junction to case, r th(j-c) - ? c/kw 0.001 0.01 0.1 1 10 100 time - (s) anode side cooled double side cooled fig.4 average current rating vs temperature 25 50 75 100 125 150 case temperature, t c - ( ? c) 1000 900 800 700 600 500 400 300 200 100 average current, i t(av) - (a) 0 double side cooled anode side cooled
www.dynexsemi.com ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 ACR300SG33 5/6 package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 2 holes 3.6x2.0 deep (in both electrodes) 34 nom 27.0 25.4 1.5 cathode gate anode 34 nom 58.5 max nominal weight: 310g clamping force: 12kn 10% lead length: 420mm lead terminal connector: m4 ring package outine type code: g cathode tab
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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